Method for aligning exposure mask and method for...

Radiation imagery chemistry: process – composition – or product th – Registration or layout process other than color proofing

Reexamination Certificate

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C430S001000, C430S030000, C356S401000, C359S012000, C359S015000, C359S035000

Reexamination Certificate

active

11235262

ABSTRACT:
A method for aligning an exposure mask, comprises: using a plurality of hologram masks, on which alignment marks are formed,; aligning position of the hologram masks toward an object, which is exposed and on which alignment marks are also formed, a plurality of times by using both alignment marks, wherein a first straight line connects a first area on the object to be exposed for a pattern exposure with the alignment mark for aligning with a holographic mask that is used in an exposure onto the first area and a second straight line connects the other area, adjacent to the first area, on the object to be exposed for a pattern exposure with the other alignment mark for aligning with a holographic mask that is used in an exposure onto the another area, and the first straight line and the second straight line are intersected each other.

REFERENCES:
patent: 6329104 (2001-12-01), Clube et al.
Francis Clube, et al., “P-40: 0.5 μm Enabling Lithography for Low-Temperature Polysilicon Displays”, SID 03 DIGEST, 2003, pp. 350-353.
Ali Reza Nobari, et al., “Magnification Compensating 0.4 μm Exposure System for Peripheral ICs”, IDW '04, pp. 765-766.

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