Method for adjusting the threshold of a read-only memory to achi

Fishing – trapping – and vermin destroying

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432 48, 432149, 432931, H01L 21266

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active

054864879

ABSTRACT:
A method of manufacture of a low-capacitance programmed cell structure for read-only memory circuits comprises a field-effect transistor having conventional source and drain regions separated by a channel region overlaid by the gate of the transistor. This ROM memory cell is programmed by a channel implant extending only from the source region for a selected distance into the channel region.

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