Method for adjusting a critical dimension in a high aspect...

Details Method for adjusting a critical dimension in a high aspect... Method for adjusting a critical dimension in a high aspect...

2006-08-08

2010-06-08

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S738000, C430S312000

Reexamination Certificate

active

07732340

ABSTRACT:
A method for adjusting the lateral critical dimension (i.e., length and width) of a feature formed in a layer on a substrate using a dry etching process. One or more thin intermediate sub-layers are inserted in the layer within which the feature is to be formed. Once an intermediate sub-layer is reached during the etching process, an etch process is performed to correct and/or adjust the lateral critical dimensions before etching through the intermediate sub-layer and continuing the layer etch.

REFERENCES:
patent: 6214696 (2001-04-01), Wu
patent: 2004/0266134 (2004-12-01), Huang et al.
patent: 2005/0064714 (2005-03-01), Mui et al.

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