Method for adding impurities to semiconductor base material

Details Method for adding impurities to semiconductor base material Method for adding impurities to semiconductor base material

1984-05-24

1986-10-21

Roy, Upendra

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, 204164, 427 39, H01L 21225, H01J 1700

Patent

active

046183817

ABSTRACT:
A method for adding impurities to a semiconductor base material comprises the steps of placing the base material in a vacuum chamber having an atmosphere containing the impurities as dopants, heating the base material to a temperature not exceeding 400.degree. C., and causing a glow discharge in the vacuum chamber. The impurities are introduced as a gas containing, for example, diboron, phosphine, antimony, arsenic, gallium, or as an organic metal gas such as trimethyl gallium, trimethyl indium, or trimethyl aluminum. To cause the dopant atoms to become substitutional by assuming lattice positions, the base material may be subjected to a second glow discharge in an inert gas atmosphere.

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patent: 4434036 (1984-02-01), Hoerschelmann et al.
patent: 4465529 (1984-08-01), Arima et al.
patent: 4525224 (1985-06-01), Vlasak
patent: 4540647 (1985-09-01), Borsenberger

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