Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-08-30
2011-08-30
Nguyen, Tuan (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185180, C365S185220, C365S185240, C365S185020
Reexamination Certificate
active
08009472
ABSTRACT:
A method in which non-volatile memory device is accessed using voltages which are customized to the device, and/or to portions of the device, such as blocks or word lines of non-volatile storage elements. The accessing can include programming, verifying or reading. By customizing the voltages, performance can be optimized, including addressing changes in threshold voltage which are caused by program disturb. In one approach, different sets of storage elements in a memory device are programmed with random test data. A threshold voltage distribution is determined for the different sets of storage elements. A set of voltages is determined based on the threshold voltage distribution, and stored in a non-volatile storage location for subsequent use in accessing the different sets of storage elements. The set of voltages may be determined at the time of manufacture for subsequent use in accessing data by the end user.
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Lasser Menahem
Murin Mark
Le Toan
Nguyen Tuan
SanDisk IL Ltd.
Vierra Magen Marcus & DeNiro LLP
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