Method for accelerated test of semiconductor devices

Details Method for accelerated test of semiconductor devices Method for accelerated test of semiconductor devices

1997-09-18

1999-07-06

Nguyen, Hoa T.

Excavating

3241581, 324719, 324765, G11C 2900, G01R 104

Patent

active

059205741

ABSTRACT:
A method for an accelerated test of semiconductor devices comprises the steps of determining a relational expression t.sub.1 =t.sub.2.sup.m between an information holding lifetime t.sub.1 at a temperature T.sub.1 and another lifetime t.sub.2 at another temperature T.sub.2, expressing the exponent m as a function of the temperature that is proportional to the Boltzmann's factor, and calculating the information holding lifetime t.sub.2 at the temperature T.sub.2 on the basis of the information holding lifetime t.sub.1 at the temperature T.sub.1 using the relational expression.

REFERENCES:
patent: 3474530 (1969-10-01), Ainslie et al.
patent: 4483629 (1984-11-01), Schwarz et al.
patent: 4739258 (1988-04-01), Schwarz
patent: 5287313 (1994-02-01), Okajima
patent: 5291142 (1994-03-01), Ohmi
patent: 5497076 (1996-03-01), Kuo et al.
patent: 5696452 (1997-12-01), Hemmenway et al.

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