Method for a tungsten silicide etch

Details Method for a tungsten silicide etch Method for a tungsten silicide etch

2005-03-22

2005-03-22

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S711000, C438S714000

Reexamination Certificate

active

06869885

ABSTRACT:
A tungsten silicide etch process allows for a high etch rate and about 90° sidewall profiles of etched features. According to an example embodiment, a substrate is placed into an etch zone and a process gas comprising SF6, He, HBr, and a chlorine-containing gas is introduced in the etch zone. A plasma is generated in the etch zone to form an etch gas from the process gas that anisotropically etches the tungsten silicide layer.

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