Data processing: structural design – modeling – simulation – and em – Simulating nonelectrical device or system
Reexamination Certificate
2008-01-15
2008-01-15
Rodriguez, Paul (Department: 2123)
Data processing: structural design, modeling, simulation, and em
Simulating nonelectrical device or system
C716S030000, C716S030000, C438S007000, C438S016000
Reexamination Certificate
active
07319944
ABSTRACT:
A computer implemented method for development profile simulation in accordance with an embodiment of the present invention includes calculating optical intensities in a photosensitive resist, calculating a spatial average value of the optical intensities, reading a measured changing ratio of a dissolution rate of the photosensitive resist relating to an alkaline concentration changed by at least one of exposure dose on the photosensitive resist, a position in the thickness direction of the photosensitive resist and an alkaline concentration of developer for the photosensitive resist, obtaining a calculated dissolution rate by using the spatial average value and the measured changing ratio, and predicting a pattern shape of the photosensitive resist from the calculated dissolution rate.
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Mimotogi Shoji
Nakamura Hiroko
Onishi Yasunobu
Craig Dwin McTaggart
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Rodriguez Paul
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