Method for a partially etched capacitor layer including a...

Details Method for a partially etched capacitor layer including a... Method for a partially etched capacitor layer including a...

2009-02-24

2010-12-07

Ghyka, Alexander G (Department: 2812)

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

Reexamination Certificate

active

07846217

ABSTRACT:
The present subject matter includes a method that includes joining a first connection member to an unetched connection area, the unetched connection area located on a single major surface of a first planar anode, forming a capacitor stack by aligning the first planar anode with at least a second planar anode, the second planar anode including at least a second connection member, the first connection member and the second connection member for electrical connection of the first planar anode to the second planar anode, aligning the first connection member and the second connection member to define an anode connection surface and joining the first planar anode and the second planar anode.

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