Method for a MOS device manufacturing

Details Method for a MOS device manufacturing Method for a MOS device manufacturing

1995-09-01

1997-07-08

Trinh, Michael

Fishing, trapping, and vermin destroying

437 27, 437247, 148DIG3, H01L 218234

Patent

active

056460570

ABSTRACT:
A method is provided for improving the performance characteristics of the MOS devices contained within an integrated circuit that has been subjected to a rapid thermal anneal. After the rapid thermal anneal the integrated circuit is heated for more than about 30 minutes at a temperature of more than about 430.degree. C. in a gaseous atmosphere that contains hydrogen, typically forming gas.

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Tanigaki et al, "A New Self-Aligned Contact Technology" J. Electrochem. Soc. Solid State Sci. & Tech, pp. 471-472, vol. 125, No. 3, Mar. 1978.

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