Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-11-08
2005-11-08
Mai, Son (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S210130
Reexamination Certificate
active
06963505
ABSTRACT:
The present invention is a method, circuit and system for determining a reference voltage. Some embodiments of the present invention relate to a system, method and circuit for establishing a set of operating reference cells to be used in operating (e.g. reading) cells in an NVM block or array. As part of the present invention, at least a subset of cells of the NVM block or array may be read using each of two or more sets of test reference cells, where each set of test reference cells may generate or otherwise provide reference voltages at least slightly offset from each other set of test reference cells. For each set of test reference cells used to read at least a subset of the NVM block, a read error rate may be calculated or otherwise determined. A set of test reference cells associated with a relatively low read error rate may be selected as the set of operating reference cells to be used in operating (e.g. reading) other cells, outside the subset of cells, in the NVM block or array. In a further embodiment, the selected set of test reference cells may be used to establish an operating set of reference cells having reference voltages substantially equal to those of the selected test set.
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Aifun Semiconductors Ltd.
Eitan Law Group
Mai Son
LandOfFree
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