Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-02-27
2007-02-27
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185290
Reexamination Certificate
active
11155252
ABSTRACT:
The present invention consists of a method and system for compensating, over time and over an operating temperature range, for margin loss in a non-volatile memory (“NVM”) cell, which method comprises selection of a reference level based on temperature readings obtained from a temperature sensing element that is thermally coupled, directly or indirectly, to the NVM cell. The reference level may be selected from a group consisting of references levels of various types, or it may be obtained by adjusting the output of a single reference based on the temperature reading(s), or it may be obtained by utilizing pre-stored conversion data, which conversion data associates a given temperature reading with a corresponding temperature range that is, in turn, associated with a corresponding reference level. A pool of likewise reference cells may be provided, and the reference level may be selected from this pool, based on its association to the temperature reading. The pool of reference cells may consist of Program verify reference cells, or Erase verify reference cells.
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Betser Yoram
Maayan Eduardo
Sofer Yair
Eitan Law Group
Le Thong Q.
Saifun Semiconductors Ltd.
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