Method chemical-mechanical polishing and planarizing...

Details Method chemical-mechanical polishing and planarizing... Method chemical-mechanical polishing and planarizing...

2007-05-29

2007-05-29

Wilson, Lee D. (Department: 3723)

Abrading

Abrading process

Glass or stone abrading

C451S028000

Reexamination Certificate

active

11131962

ABSTRACT:
Compositions and methods for planarizing or polishing a corundum, GaAs, GaP or GaAs/GaP alloy surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) a smectite clay, preferably a sodium smectite clay; and optional additives, such as (c) CeO2, SiO2and/or Al2O3abrasive particles, (d) a chemical accelerator; and (e) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the material removed during the polishing process. The optional complexing or coupling agent carries away the removed particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing corundum, GaAs, GaP and GaAs/GaP alloy surfaces comprising contacting the surface with the compositions.

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PCT International Search Report from the European Patent Office for International Patent Application No. PCT/US2004/031645 dated Jan. 3, 2005 (3 pages).

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