Method capable of accurately simulating ion implantation at a hi

Details Method capable of accurately simulating ion implantation at a hi Method capable of accurately simulating ion implantation at a hi

1997-10-30

1999-11-02

Nguyen, Keit T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37317

Patent

active

059775513

ABSTRACT:
On simulating ion implantation on the basis of Monte Carlo method, a plurality of triangle meshes are produced to a polygonal substrate to be label serial numbers at a first step. An ion is implanted as an implanted ion to the polygonal substrate at a second step. At a third step, the triangle meshes are checked in an ascending order until one of triangle meshes is found as a specific triangle mesh in which the implanted ion is positioned. Point defect concentration is extracted from the specific triangle mesh at a fourth step. Random numbers are generated in order to calculate scattering of the implanted ion a fifth step. The point defect concentration is renewed into a renewed point defect concentration in the specific triangle mesh at a sixth step. The energy, the position, and the travelling direction is renewed in the implanted ion at a seventh step. The third to the seventh steps is repeated until the implanted ion stops in said polygonal substrate.

REFERENCES:
patent: 4800100 (1989-01-01), Herbots et al.
Masami Hane, "Ion Implantation Model Considering Crystal Structure Effects", IEEE Transactions On Electron Devices, vol. 37, No. 9, Sep. 1990, pp. 1959-1963.
Japanese Office Action, dated Dec. 8, 1998, with English language translation of Japanese Examiner's comments.
Rafferty, C. S., et al., "Iterative methods in semiconductor device simulation," IEEE Transactions on Electron Devices, vol. 32, No. 10, Oct. 1985, pp. 2018-2027.

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