Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-03-22
2010-11-30
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE29180, C257SE31063
Reexamination Certificate
active
07843030
ABSTRACT:
Here, we demonstrate new material/structures for the photodetectors, using semiconductor material. For example, we present the Tunable Avalanche Wide Base Transistor as a photodetector. Particularly, SiC, GaN, AlN, Si and Diamond materials are given as examples. The desired properties of an optimum photodetector is achieved. Different variations are discussed, both in terms of structure and material.
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Bodendorf Andrew
Kuo W. Wendy
Pert Evan
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