Method, apparatus, and system for low temperature deposition...

Details Method, apparatus, and system for low temperature deposition... Method, apparatus, and system for low temperature deposition...

2006-06-29

2009-08-11

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

C438S238000, C438S239000, C438S778000, C257SE21008, C257SE21019

Reexamination Certificate

active

07572709

ABSTRACT:
Some embodiments of the invention include thin film capacitors formed in a package substrate of an integrated circuit package. At least one of the thin film capacitors includes a first electrode layer, a second electrode layer, and a dielectric layer between the first and second electrode layers. Each of the first and second electrode layers and the dielectric layer is formed individually and directly on the package substrate. Other embodiments are described and claimed.

REFERENCES:
patent: 6130124 (2000-10-01), Lee
patent: 6477034 (2002-11-01), Chakravorty et al.
patent: 2004/0018693 (2004-01-01), Shioga et al.
patent: 2005/0007723 (2005-01-01), Mosley
patent: 2005/0094452 (2005-05-01), Lee et al.
patent: 2006/0000542 (2006-01-01), Palanduz et al.
patent: 2006/0091495 (2006-05-01), Pallanduz et al.
patent: 2006/0097246 (2006-05-01), Palanduz et al.
patent: 2006/0099803 (2006-05-01), Min
patent: 2008/0145622 (2008-06-01), Roy et al.
Achar, B. N., et al., “Phthalocyanine Polymers. II Synthesis and Characterization of Some Metal Phthalocyanine Sheet Oligomers.”,Journal of Polymer Science: Polymer Chemistry Edition, 20, (1982), 1785-1790.
Zhang, Q. M., et al., “An All-Organic Composite Actuator Material With a High Dielectric Constant”,Nature, 419(6904), (Sep. 19, 2002), 284-287.
Matsumoto, T. et al., “Low temperature preparation of perovskite oxide films by ECR sputtering assisted with microwave treatment”,Surface and Coatings Technology, 174-175, (Sep.-Oct. 2003),611-614.
Min, Y., et al., “Capacitor With Co-Planar Electrodes”, U.S Appl. No. 11/092,357, filed Mar. 29, 2005.
Min, Y. , et al., “IC Package With Prefabricated Film Capacitor”, U.S. Appl. No. 11/095,690, filed Mar. 31, 2005.
Min, Y. , et al., “Integrated Thin Film Capacitors With Adhesion Holes for the Improvement of Adhesion Strength”, U.S. Appl. No. 11/304,649, filed Dec. 14, 2005.
Min, Y. , “Integrated Thin-Film Capacitor With Etch-Stop Layer, Process of Making Same, and Packages Containing Same”, U.S. Appl. No. 11/152,328, filed Jun. 14, 2005.
Min, Y. , “Method of Providing a VIA Opening in a Dielectric Film of a Thin Film of a Thin Film Capacitor”, U.S. Appl. No. 11/297,854, filed Dec. 8, 2005.
Min, Y. , “Pre-Patterned Thin Film Capacitor and Method for Embedding Same in a Package Substrate”, U.S. Appl. No. 11/166,962, filed Jun. 23, 2005.
Salama, I. A., et al., “Low Temperature Deposition and Ultra Fast Annealing of Integrated Circuit Thin Film Capacitor”, U.S. Appl. No. 11/277,606, filed Mar. 27, 2006.
Seh, H. , et al., “Inkjet Patterning for Thin-Film Capacitor Fabrication, Thin-Film Capacitors Fabricated Thereby, and Systems Containing Same”, U.S. Appl. No. 11/396,394, filed Mar. 31, 2006.
Seh, H. , et al., “Sol-Gel and Mask Patterning for Thin-Film Capacitor Fabrication, Thin-Film Capacitors Fabricated Thereby, and Systems Containing Same”, U.S. Appl. No. 11/396,386, filed Mar. 31, 2006.

Affiliated with

Also associated with

Rating

Method, apparatus, and system for low temperature deposition... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method, apparatus, and system for low temperature deposition..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method, apparatus, and system for low temperature deposition... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4066323