Data processing: structural design – modeling – simulation – and em – Simulating nonelectrical device or system – Chemical
Patent
1998-03-12
2000-11-28
Teska, Kevin J.
Data processing: structural design, modeling, simulation, and em
Simulating nonelectrical device or system
Chemical
703 2, 703 3, 703 13, G06G 748, G06G 758
Patent
active
061547182
ABSTRACT:
A distribution of the concentration of initial point-defects which generate in an ion implanting process is obtained with an ion implanting simulator. As a local function of the distribution, the distribution of the intensity of absorption of point-defects is obtained. A term of absorption of point-defects obtained from the distribution of the intensity is included in a diffusion equation. With the resultant diffusion equation, the diffusion simulation is performed. Thus the simulation using the diffusion equation may be extended to two or three dimension and cope with various ion implanting conditions.
REFERENCES:
patent: 4599118 (1986-07-01), Han et al.
patent: 5504016 (1996-04-01), Aronowitz
patent: 5784302 (1998-07-01), Kumashiro
The Efficient Simulation of Coupled Point Defect and Impurity Diffusion XP-002126436.
A New Approach to the Simulation of the Coupled Point Defects and Impurity Diffusion XP-002126435.
Fast Simulation of Coupled Defect-Impurity Diffusion in Findpro: Comparision with Suprem-IV and Other Programs XP-000857501.
A New High-Speed Non-Equilibrium Point Defect Model for Annealing Simulation XP-000863148.
Abstract Translation of "Technology of Process Device Simulator (translated title)" by Ryo Dan, Sangyo-Tosho Publishing Company, pp. 18-79, Apr. 20, 1990.
A Model for Boron Short Time Annealing After Ion Implantation Masami Hane and Hiroshi Matsumoto, Member, IEEEV, vol. 40, No. 7, Jul. 1993, pp. 1215-1222.
Modeling high-concentration boron diffusion under amorphization conditions Bruno Baccus, Eric Vandenbossche and Michel Lannoo; vol. 77, No. 11, Jun. 1995, pp. 1-12).
Kao et al, "Investigation of the Electron Transfer Characteristics in Multi-delta-Doped GaAs FET's", IEEE Transactions on Electron Devices, vol. 43 issue 8, pp. 1181-1186, 1996.
Broda Samuel
NEC Corporation
Teska Kevin J.
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