Method and test system for determining gate-to-body current...

Details Method and test system for determining gate-to-body current... Method and test system for determining gate-to-body current...

2007-07-18

2011-11-22

Vo, Nguyen (Department: 2618)

Telecommunications

Transmitter and receiver at separate stations

Short range rf communication

C324S762010, C257S048000

Reexamination Certificate

active

08064832

ABSTRACT:
In one disclosed embodiment, the present method for determining a gate-to-body current for a floating body FET comprises measuring at least three unique gate-to-body currents corresponding to at least three unique body-tied FET structures, determining at least three unique relationships between the at least three unique gate-to-body currents and at least three gate-to-body current density components for the at least three unique body-tied FET structures, and utilizing those at least three unique relationships to determine the at least three gate-to-body current density components; wherein one of the gate-to-body current density components is used to determine the gate-to-body current for the floating body FET. In one embodiment, a test structure implements a method for determining a gate-to-body current in a floating body FET. The determined gate-to-body current may be used to predict hysteresis in the floating body FET.

REFERENCES:
patent: 5687355 (1997-11-01), Joardar et al.
patent: 7011980 (2006-03-01), Na et al.
patent: 2003/0173588 (2003-09-01), Bianchi
Das, Koushik K., and Brown, Richard B., “Novel Circuit Styles for Minimization of Floating Body Effects in Scaled PD-SOI CMOS”, VLSI, 2003, Proceedings of the IEEE Computer Society Annual Symposium on VLSI (ISVLSI'03), pp. 29-34.
Maddah, M., Bolouki, S., Afzali-Kusha, A., Mahmoud El-Nokali, “A Compact Modeling of Drain Current in PD/FD SOI MOSFETs”, Microelectronics, The 14th International Conference on 2002—ICM, 2002, pp. 75-78.
Wu, Weimin, et al., “A compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs”, IEEE Transactions on Electron Devices, vol. 54, No. 2, Feb. 2007, pp. 316-322.
Lu, Pong-Fei et al., “Floating-Body Effects in Partially Depleted SOI CMOS circuits” IEEE Journal o f Solid State Circuits, vol. 32, No. 8, Aug. 1997, pp. 1241-1253.

Affiliated with

Also associated with

Rating

Method and test system for determining gate-to-body current... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and test system for determining gate-to-body current..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and test system for determining gate-to-body current... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4269997