Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2006-04-11
2006-04-11
Blum, David (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Reexamination Certificate
active
07026640
ABSTRACT:
A dynamically controllable photonic crystal comprises at least one micro-cavity, and electrical means to induce carrier refraction in the vicinity of the micro-cavity. In the exemplary case when the photonic crystal is implemented in a semiconductor substrate, localized carrier refraction is achieved using field induced carrier injection or depletion into a carrier concentration column surrounding the micro-cavity. Preferably, if the substrate is silicon, the injection and depletion is achieved using various two or three terminal, unipolar or bipolar structures.
REFERENCES:
patent: 6058127 (2000-05-01), Joannopoulos et al.
patent: 6444133 (2002-09-01), Fajardo et al.
patent: 6472804 (2002-10-01), Mueller et al.
patent: 6512866 (2003-01-01), Fan et al.
patent: 6542682 (2003-04-01), Cotteverte et al.
patent: 6560006 (2003-05-01), Sigalas et al.
patent: 6580547 (2003-06-01), Liu et al.
patent: 6826320 (2004-11-01), Deliwala
patent: 2002/0146196 (2002-10-01), Shirane et al.
patent: 2002/0159733 (2002-10-01), Flory et al.
patent: 2002/0172456 (2002-11-01), Hosomi et al.
A Three Dimensional Optical Photonic Crystal, Lin et al, Journal Of Lightwave Technology vol. 17, No. 11 Nov. '99.
Quasimetallic silicon micromachined photonic crystals, Temelkuran et al, Appl. Physics Letters, vol. 78, No. 3 Jan. 2001 pp 264-266.
Fabrication of Photonic Crystals Consisting of Si Nanopillars By Plasma Etching Using Self-Formed Masks, Tada et al, pp 7253-7256, Jpn J Appl Phys, vol. 38 (1999) Pt 1, No. 12B.
Fabrication of two-dimensional photonic crystal waveguides for 1.5um in silicon by deep anisotropic dry etching, Zijlstra et al; 1999 American Vacuum Society pp2734-2739.
Investigation of a channel-add/drop-filtering device using acceptor-type point defects in a two-dimensional photonic-crystal slab, Asano et al; Applied Physics Letters vol 83 No. 3 Jul. 2003, pp407-409.
Electrooptical Effects in Silicon, Soref et al; Jl of Quantum Electronics, vol. QE-23, No. 1 Jan. 87 pp. 123-129.
Fabrication of a narrow gold wire using scanning tunneling microscopy; Okamoto et al;, Jpn J Appl Phys, vol. 36 (1997) Pt 1, No. 6B pp. 3832-3833.
Fabrication and direct transmission measurement of high-aspect-ratio two-dimensional silicon-based photonic crystal chips, Xu et al, J Opt Soc Am B/vol. 18 No. 8 Aug. 2001pp. 1084-1091.
Defect Modes in Two-Dimensional Triangular Photonic Crystals. X. P. Feng et al , Jpn. J. Appl. Phys., 36 pp. L120-L123, 1997.
Narrow Band Microcavity Waveguides In Photonic Crystals, Boag et al, J. Opt. Soc. Am. A, 18(11) pp. 2799-2805, 2001.
Bipolar Semiconductor Devices; Roulston; Section 3.5.2 , Mc-Graw Hill 1990, ISBN 0-07-054120-5.
Photonic Crystals: putting a new twist on light, Joannopoulus et al., Nature, vol. 386, Mar. 13, 1997, pp. 143-149.
Design And Sensitivity Analysis Of Narrow Band Photonic Waveguides, Boag et al, URSI Radio Science Meeting, Boston, MA, Jul. 2001, pp 33-35.
Chapter 55 of the “Complete guide to semiconductor devices” by Kwok K. Ng, Mc-Graw Hill, 1995, ISBN 0-07-035860-5, pp 441-445.
Chapter 15 of the “Complete guide to semiconductor devices” by Kwok K. Ng, Mc-Graw Hill, 1995, ISBN 0-07-035860-5, pp. 132-143.
Boag Amir
Nathan Menachem
Steinberg Ben Zion
Blum David
Dolan Jennifer M
Friedman Mark M.
Ramot at Tel Aviv University Ltd.
LandOfFree
Method and systems for dynamically controlling... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and systems for dynamically controlling..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and systems for dynamically controlling... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3585458