Method and system of finding a read voltage for a flash memory

Details Method and system of finding a read voltage for a flash memory Method and system of finding a read voltage for a flash memory

2009-08-18

2011-12-06

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185090, C365S185180

Reexamination Certificate

active

08072805

ABSTRACT:
A method and system of finding a read voltage for a flash memory is disclosed. Data are read from array cells of the flash memory with a default read voltage, and a recorded state bit number that is recorded during programming is also read. Determine an optimal read voltage if the readout data do not pass the error correction control (ECC). Data are then re-read from the array cells of the flash memory with the determined optimal read voltage.

REFERENCES:
patent: 2008/0263266 (2008-10-01), Sharon et al.
patent: 2009/0003058 (2009-01-01), Kang
patent: WO2008/111058 (2008-09-01), None

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