Method and system of driving power field effect transistor

Details Method and system of driving power field effect transistor Method and system of driving power field effect transistor

1975-11-18

1978-06-06

Anagnos, Larry N.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

307270, 307315, 330296, 330299, H03F 316, H03F 321

Patent

active

040939251

ABSTRACT:
A method and a system of obtaining a large power with the use of a junction field effect transistor by extending the working range to improve the utilization rate of the power source voltage. The range for the gate voltage is set up to some predetermined forward voltage at which the gate and the source will be subjected to a forward biasing. The source-to-drain internal resistance is reduced by this forward gate voltage, but no gate current is allowed to flow probably due to the existence of a non-linear element between the gate and the source.

REFERENCES:
patent: 3462701 (1969-08-01), Miller
patent: 3670184 (1972-06-01), Idei et al.
patent: 3921089 (1975-11-01), Tsurushima
Carlson, "Common Sense Design of Transistor Amplifiers," Electronics World; pp. 48-50, 52, 53; 6/1967.
Electronics, (pub.), pp. 100, 12/1966.
Funkschau, 1974, Heft 25, pp. 993-994.
Sherwin, "Biasing of FETs Ensures Consistent Circuit Performances," Electronic Engrg.; pp. 52-56; 4/1971.
Ott, "Biasing the Junction FET," EEE-Jan./1970; pp. 52-57.

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