Method and system for uniformity control in ballistic...

Details Method and system for uniformity control in ballistic... Method and system for uniformity control in ballistic...

2006-12-11

2010-11-09

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C156S345440

Reexamination Certificate

active

07829469

ABSTRACT:
A method and system for adjusting and controlling the plasma uniformity in a plasma processing system is described. The plasma processing system includes an electron source electrode to which direct current (DC) power is coupled in order to generate a ballistic electron beam during the etching of the substrate. A ring electrode, provided about a periphery of the substrate and opposite the electron source electrode, is utilized to create a ring hollow cathode plasma to affect changes in the distribution of plasma density.

REFERENCES:
patent: 5685949 (1997-11-01), Yashima
patent: 7048837 (2006-05-01), Somekh et al.
patent: 2002/0182880 (2002-12-01), Zhu et al.
patent: 2003/0164142 (2003-09-01), Koshimizu

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