Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-05-22
1999-06-08
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
216 38, 216 89, 438693, H01L 2100
Patent
active
059100222
ABSTRACT:
The present invention comprises a chemical mechanical polishing (CMP) process for removing tungsten from the surface of a dielectric layer of a semiconductor wafer. The CMP process of the present invention removes tungsten from the surface of the dielectric layer while planarizing the dielectric surface. The system of the present invention places a wafer onto a pad of a CMP machine. The wafer includes an overlying layer of tungsten and an underlying layer of dielectric material. Slurry is dispensed onto the polishing pad and the wafer is polished by the CMP machine. The CMP machine polishes the wafer such that the CMP process has a substantially equal amount of tungsten to dielectric selectivity. This allows the CMP process to remove excess tungsten from the surface of the dielectric layer while simultaneously planarizing the dielectric layer. When the dielectric layer is sufficiently planarized and the excess tungsten has been removed, the wafer is removed from the CMP machine.
REFERENCES:
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5328553 (1994-07-01), Poon
Powell William
VLSI Technology Inc.
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