Method and system for trapping contaminants formed during chemic

Details Method and system for trapping contaminants formed during chemic Method and system for trapping contaminants formed during chemic

1997-02-14

2000-01-18

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

156345, C23C 1600

Patent

active

060154632

ABSTRACT:
A chemical vapor deposition system is provided. The chemical vapor deposition system is used to deposit an inorganic layer on a silicon wafer. The chemical vapor deposition system includes a reactor chamber, a particle trap, a gate valve, and a vacuum system. The vacuum system forces a gas out of the reactor chamber and through the particle trap and the gate valve. When the gate valve opens and closes, particles inside the valve can contaminate the reactor chamber and the vacuum system. The particle trap has a reservoir in which particles in the gas may become trapped before they reach the gate valve. The particle trap helps prevent the particles from becoming trapped in the gate valve.

REFERENCES:
patent: 5062771 (1991-11-01), Satou
patent: 5114683 (1992-05-01), Hirase
patent: 5250092 (1993-10-01), Nakano
patent: 5422081 (1995-06-01), Miyagi

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