Method and system for simulating ion implantation for performing

Details Method and system for simulating ion implantation for performing Method and system for simulating ion implantation for performing

1995-10-12

1998-04-07

Teska, Kevin J.

Boots, shoes, and leggings

36446804, 36446828, 395119, 395138, G06F 1750

Patent

active

057372500

ABSTRACT:
An ion implantation simulation system includes a grid generating portion for generating an orthogonal grid with respect to a two-dimensional configuration of a simulation object, an elongated segment extracting portion for extracting elongated segments defined by two grid lines in the orthogonal grid, a cell analyzing portion for extracting cells defined by adjacent grid lines perpendicular to the longer edge of the elongated segment, in the extracted elongated segments, and linearly rearranging polygon elements presenting in the cell along the longer edge direction, simulation performing portion performing linear ion implantation simulation with respect to the cell, in which the polygon elements are linearly rearranged, and a calculation result registering portion for registering an impurity concentration obtained as a result of simulation for each polygon element and registering the impurity concentration in each polygon element.

REFERENCES:
patent: 5379225 (1995-01-01), Tazawa et al.
patent: 5416729 (1995-05-01), Leon et al.
Kitagawa et al., "An Interactive Voxel Data Manipulation System for Surgical Simulation", IEEE, 1994, pp. 204-209.
Westermann et al., "Reliable Solid Modeling for three Dimensional Semiconductor process and Device Simulation", IEEE, 1994, pp. 49-52.
"Analysis and Simulation of Semiconductor Devices"; Springer-Verlag, New York, pp. 46-63.

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