Method and system for proximity effect and dose correction...

Details Method and system for proximity effect and dose correction... Method and system for proximity effect and dose correction...

2011-03-08

2011-03-08

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492230, C430S030000, C430S296000, C430S942000

Reexamination Certificate

active

07902528

ABSTRACT:
A method of particle beam lithography includes selecting at least two cell patterns from a stencil, correcting proximity effect by dose control and by pattern modification for the at least two cell patterns, and writing the at least cell two patterns by one shot of the particle beam after proximity effect correction (PEC).

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