Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2006-01-31
2006-01-31
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
With measuring or testing
C438S016000, C438S017000, C438S151000
Reexamination Certificate
active
06991946
ABSTRACT:
The present inventive principles provide a method and system for performing backside voltage contrast on an SOI device. The SOI semiconductor device includes a bulk silicon, a box insulator residing on the bulk silicon and a silicon region on the box insulator. The SOI semiconductor device further includes a plurality of structures in the silicon region, the plurality of structures includes a conductive structure. The method and system include mechanical dimpling and chemical etching of the substrate to expose the box insulator. Optionally, a second chemical etch to remove at least a portion of the box insulator may be performed. A charged particle beam, such as energetic electrons from an SEM, for example, may be directed at the backside of the device, and emitted secondary electrons observed.
REFERENCES:
patent: 6201240 (2001-03-01), Dotan et al.
patent: 6236222 (2001-05-01), Sur et al.
patent: 6300147 (2001-10-01), Naruoka
patent: 6451668 (2002-09-01), Neumeier et al.
patent: 6521512 (2003-02-01), Vasquez
patent: 6770495 (2004-08-01), Ang et al.
Mahanpour Mehrdad
Massodi Mohammad
Yuan Caiwen
Advanced Micro Devices , Inc.
Picardat Kevin M.
Winstead Sechrest & Minick P.C.
LandOfFree
Method and system for providing backside voltage contrast... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and system for providing backside voltage contrast..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for providing backside voltage contrast... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3544026