Method and system for protecting a gate controlled thyristor aga

Details Method and system for protecting a gate controlled thyristor aga Method and system for protecting a gate controlled thyristor aga

1990-12-04

1993-05-18

Stephan, Steven L.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific voltage responsive fault sensor

361 18, 361 56, H02H 320

Patent

active

052126196

ABSTRACT:
Protecting a gate fully controlled thyristor that is controlled by a drive circuit including a turn-on circuit and a turn-off circuit against overvoltage, is accomplished by monitoring the anode voltage of said gate fully controlled thyristor relative to its cathode voltage. Upon overshoot of the voltage of a predetermined limit, a control signal is generated. This control signal causes the negative voltage source that is connected at the gate of the gate fully controlled thyristor to turn off. The gate fully controlled thyristor is then turned on by means of the turn-on circuit.

REFERENCES:
patent: 4115707 (1978-09-01), Kalfus
patent: 4275430 (1981-06-01), Seki
patent: 4392175 (1983-07-01), Takigami
patent: 4417156 (1983-11-01), Fukui
patent: 4587438 (1986-05-01), Murakami
patent: 4682278 (1987-07-01), Marquardt et al.
Elektronik, vol. 33, No. 20, Oct. 5, 1984, pp. 111-115, Munich, W. Germany; A. Honda; "Optimierte Ansteuerschaltungen fur GTO-Thyristoren", Part 1.
Elektronik, vol. 33, No. 21, Oct. 19, 1984, pp. 91-96, Munich, W. Germany; A. Honda; "Optimierte Ansteuerschaltungen fur GTO-Thyristoren", Part 2.
Elektroniker, No. 5, 1984, pp. 49-56: "Abschaltbare Hochleistungsthyristoren (GTOs) fur den Anwenderheute".
BBC-Nachrichten, 1977, Heft 3/4, pp. 152-158: "Thyristorschutz mit Halbleitern-wirtschaftlich und sicher".

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