Method and system for monitoring EUV lithography mask flatness

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Reexamination Certificate

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C355S072000

Reexamination Certificate

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06950176

ABSTRACT:
Disclosed are a method of and a system for monitoring extreme ultraviolet (EUV) lithography mask flatness. An EUV mask, which is chucked to a chuck, can be scanned with a capacitance probe that generates elevation data for the EUV mask. From the elevation data, a first flatness profile can be generated. In one embodiment, the EUV mask can be rotated and rescanned.

REFERENCES:
patent: 4666291 (1987-05-01), Taniguchi et al.
patent: 5442163 (1995-08-01), Nakahara et al.
patent: 5872694 (1999-02-01), Hoinkis et al.
patent: 6353271 (2002-03-01), Williams
patent: 6537844 (2003-03-01), Itoh
patent: 6597434 (2003-07-01), Van Dijsseldonk
patent: 2001-92155 (2001-04-01), None
Briefing: EUV Mask Chucking Standards [online]. Retrieved from the Internet: <URL: http://www.sematech.org/public/resources/litho/euvl/euvlmask030702/1-Agenda.pdf>, EUVL, pp. 1-29.
Surface Flatness Measurements [online] [retrieved on Jul. 9, 2003]. Retrieved from the Internet: >URL: http://www.phase-shift.com/interferometer-flatness.html>.
Specifications Guide, 4810 Non-Contact Capacitance Gaging Instrument, Copyrighted 2002, ADE Technologies.
Specifications Guide, Microsense II—5810, Non-Contact Capacitance Gaging Module, Copyrighted 2002, ADE Technologies.

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