Method and system for measurement of resist pattern

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

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430311, 356357, G03F 720

Patent

active

057833427

ABSTRACT:
An overlay measurement pattern, which is formed in a master pattern of a mask, is selectively transferred by exposure processing onto a resist film on a wafer of semiconductor material. This is followed by detecting, by means of a two-beams interference method, a reference position for the overlay measurement pattern formed by the variation in film thickness occurring at an exposed resist region, with performing no development processing. A reference position for an overlay reference pattern, which is pre-formed in the semiconductor wafer, is detected using an interference pattern produced by white light, to detect an overlay difference between the patterns. Since neither a test exposure process nor a development process is needed to be carried out, this results in not only providing a higher throughput rate but also eliminating factors that contribute to degradation of the accuracy of overlay caused by base line stability and mask alignment repeatability. A higher overlay accuracy is achieved accordingly.

REFERENCES:
patent: 5124927 (1992-06-01), Hopewell et al.
patent: 5252414 (1993-10-01), Yamashita
patent: 5409538 (1995-04-01), Nakayama
patent: 5543918 (1996-08-01), Abraham

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