Method and system for manufacturing semiconductor device

Details Method and system for manufacturing semiconductor device Method and system for manufacturing semiconductor device

1996-08-13

1998-09-08

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

117 5, 117 8, 117 9, 117201, 117204, 117902, 117930, C30B 102

Patent

active

058039651

ABSTRACT:
A method and system for manufacturing a semiconductor device having a semiconductor layer using a pulsed laser includes the steps of generating a laser beam using a solid laser source, generating a multi-harmonic wave from the laser beam using a multi-harmonic oscillator, filtering the multi-harmonic wave, and irradiating the filtered wave onto the semiconductor layer.

REFERENCES:
patent: 3663897 (1972-05-01), Broom
patent: 3857279 (1974-12-01), Salzer et al.
patent: 5040865 (1991-08-01), Chen et al.
patent: 5249193 (1993-09-01), Watanabe
Bean et al., "Epitaxial Laser Crystallization of Thin-film Amorphous Silicon", Applied Physics Letters 33(3) pp. 227-230, Aug. 1978.

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