Method and system for manufacturing a pixel image sensor

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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C438S024000, C438S046000, C438S080000, C438S149000

Reexamination Certificate

active

06982183

ABSTRACT:
Pixel image sensors with lateral photodiode elements and vertical overflow drain systems. According to at least one embodiment of the present invention, an image sensor pixel includes a lateral photodiode element and a vertical overflow drain system for draining excessive charges accumulated in the charge collecting region of the lateral photodiode element and for resetting the charge collecting region of the lateral photodiode element.

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A Single-Chip 306×244 Pixel CMOS NTSC Video Camera, Denyer et al. VLSI Vision Ltd., Edinburgh, Scotland, IEEE, 1998.

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