Method and system for line-dimension control of an etch process

Details Method and system for line-dimension control of an etch process Method and system for line-dimension control of an etch process

2007-11-06

2007-11-06

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

C216S067000, C700S014000, C700S121000, C702S024000, C702S031000

Reexamination Certificate

active

11125696

ABSTRACT:
A method and system for controlling a dimension of an etched feature. The method includes: measuring a mask feature formed on a top surface of a layer on a substrate to obtain a mask feature dimension value; and calculating a mask trim plasma etch time based on the mask feature dimension value, a mask feature dimension target value, a total of selected radio frequency power-on times of a plasma etch tool since an event occurring to a chamber or chambers of a plasma etch tool for plasma etching the layer, and an etch bias target for a layer feature to be formed from the layer where the layer is not protected by the mask feature during a plasma etch of the layer.

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