Method and system for ion beam containment using...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S42300F, C250S42300F, C250S492300

Reexamination Certificate

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06891174

ABSTRACT:
Ion implantation systems and beam containment apparatus therefor are provided in which a photoelectron source and a photon source are provided along a beam path. The photon source, such as a UV lamp, provides photons to a photoemissive material of the photoelectron source to generate photoelectrons for enhanced beam containment in the ion implantation system.

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