Method and system for inspecting indirect bandgap...

Optics: measuring and testing – By dispersed light spectroscopy – For spectrographic investigation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

08064054

ABSTRACT:
Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area of the indirect bandgap semiconductor structure. The photoluminescence images are imaged processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.

REFERENCES:
patent: 4661770 (1987-04-01), von Roos
patent: 4713140 (1987-12-01), Tien
patent: 5192980 (1993-03-01), Dixon et al.
patent: 5381016 (1995-01-01), Moriya
patent: 6429968 (2002-08-01), Carver
patent: 2004/0263045 (2004-12-01), Smith et al.
patent: 2007/0007466 (2007-01-01), Laurent et al.
patent: 0 211 590 (1987-02-01), None
patent: 416 787 (1995-10-01), None
patent: 2 306 640 (1997-05-01), None
patent: 10270514 (1998-10-01), None
patent: WO 98/11425 (1998-03-01), None
L. Masarotto et al. Development of an UV Scanning Photoluminescence Apparatus for SiC Characterization:, Eur. Phys. J. AP 20, 141-144 (2002).
Search Report and Written Opinion, mailed Sep. 22, 2009 in Singapore Application No. 200802722.4.
Alt, H. et al., “Contrast phenomena of band-band and deep level photoluminescence topographs in annealed semi-insulating GaAs,” Appl. Phys. Lett. 55(19), Nov. 6, 1989, pp. 172-174.
Arakawa, T. et al., “Fabrication and microscopic photoluminescence imaging of ridge-type InGaAs quantum wires grown on a (110) cleaved plane of AIGaAs/GaAs superlattice,” Appl. Phys. Lett. 69(9), Aug. 26, 1996, pp. 1294-1296.
Baeumler, M. et al., “Luminescence imaging—a well-established technique to study material- and device-related problems,” Mat. Sci. Eng. B66, 1999, pp. 131-140.
Baumgartner, M. et al., “Characterization of si-GaAs wafer quality by room-temperature photoluminescence,” Appl. Surf. Sci. 50, 1991, pp. 222-227.
Bernussi, A. et al., “Photoluminescence microscopy imaging of tensile strained In1-xGaxAsyP1-y/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy,” J. Appl. Phys. 86(1), Jul. 1, 1999, pp. 402-407.
Black, J. et al., “Scanned-Laser Microscope for Photoluminescence Studies,” Appl. Opt. Vo. 11, No. 7, Jul. 1972, pp. 1553-1562.
Carver, G., “Scanned photoluminescence with high spatial resolution in semi-insulating GaAs and InP: aspects of surface passivation and photodegradation,” Semicon. Sci. Technol. 7, 1992, pp. A53-A58.
Edelman, P. et al., “Photoluminescence and minority carrier diffusion length imaging in silicon and GaAs,” Semicon. Sci. Technol. 7, 1992, pp. A22-A26.
Furstenberg, R. et al., “Apparatus for the imaging of infrared photoluminescence, transmittance, and phototransmittance with high spatial and spectral resolutions,” Rev. Sci. Instrum. 77(7), 2006, 073101-1-073101-5.
Gourley, P. et al., “Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy,” Appl. Phys. Lett. 52(5), Feb. 1, 1998, pp. 377-379.
Hovel, H., “Scanned photoluminescence of semiconductors,” Semicond. Sci. Technol. 7, 1992, pp. A1-A9.
Katsumata, T. et al., “Application of picosecond time resolved photoluminescence mapping for the characterization of semi-insulating GaAs wafers,” J. Crystal Growth 103, 1990, pp. 14-20.
Livescu, G. et al., “A real-time photoluminescence imaging system,” J. Electronic Materials 19(9), 1990, pp. 937-942.
Molva, E. et al., “Origin of microscopic inhomogeneities in bulk gallium arsenide,” J. Crystal Growth 103, 1990, pp. 91-101.
Moore, C. et al., “A spatially resolved spectrally resolved photoluminescence mapping system,” J. Crystal Growth 103, 1990, pp. 21-27.
Mori, Y. et al., “Two-dimensional image detection of luminescence and transport properties of GaAs,” J. Crystal Growth 103, 1990, pp. 8-13.
Ostapenko, S. et al., Defect mapping in full-size multi-crystalline Si wafers, Eur. Phys. J. Appl. Phys. 27, 2004, pp. 55-58.
Ostapenko, S. et al., “Defect monitoring using scanning photoluminescence spectroscopy in multicrystalline silicon wafers,” Semicond. Sci. Tech. 15, 2000, pp. 840-848.
Sartorius, B. et al., “Luminescence microscopy for quality control of material and processing,” J. Crystal Growth 83, 1987, pp. 238-245.
Sochinskii, N. et al., “Infrared photoluminescence imaging of infrared materials: HgCdTe/Cd(Zn)Te heterostructures,” Infrared Phys. Technol. 46, 2004, pp. 181-184.
Steiner, T., et al., “Cryogenic, whole wafer imaging of semi-insulating GaAs,” Semicon. Sci. Technol. 7, 1992, pp. A16-A21.
Tajima, M., “Characterization of semiconductors by photoluminescence mapping at room temperature,” J. Crystal Growth 103, 1990, pp. 1-7.
Tarasov, I. et al., “Defect passivation in multicrystalline silicon for solar cells,” Appl. Phys. Lett. 85(19), 2004, pp. 4346-4348.
Toba, R. et al., “Surface characterization of semi-insulating GaAs wafers by room temperature photoluminescence mapping,” J. Crystal Growth 103, 1990, pp. 28-37.
Vetter, T. et al., “Characterization of InP wafers by use of a system for high resolution photoluminescence imaging,” J. Mater. Res. 6(5), 1991, pp. 1055-1060.
Wang, Z. et al., “Ambient and low temperature photoluminescence topography of GaAs substrates, epitaxial and implanted layers,” Appl. Surf. Sci. 50, 1991, pp. 228-232.
Wang, Z. et al., “Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures,” J. Crystal Growth 126, 1993, pp. 205-215.
Wettling, W., “Direct and fast comparison of near-infrared absorption and photoluminescence topography of semiinsulating GaAs wafers,” Appl. Phys. A 40, 1986, pp. 191-195.
Schumacher, Kimberly L., Photoluminescence Characterization of Ultrahigh Purity Silicon, J Electronic Materials, 1989, pp. 681-687, vol. 18, No. 6.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and system for inspecting indirect bandgap... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and system for inspecting indirect bandgap..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for inspecting indirect bandgap... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4292011

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.