Method and system for in situ control of material removal proces

Details Method and system for in situ control of material removal proces Method and system for in situ control of material removal proces

1978-04-25

1979-12-18

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Optical or pre-photocell system

156626, G01N 2130

Patent

active

041796225

ABSTRACT:
In practice, the development time for a photoresist covered semiconductor wafer exposed by a given mask configuration is established experimentally. It is obvious that this time is only adequate if the other parameters do not change. According to the subject invention the mask is provided with an optical grid. The grid pattern, together with the pattern of the integrated circuit, is transferred by exposure to the photoresist layer covering the semiconductor wafer. During the development process, a light ray is directed onto the area of the wafer which was exposed to the grid pattern and the intensity of the light diffracted in the direction of the 2nd diffraction order is monitored by a light sensor. The slits of the grid may have the same width as the smallest lines of the exposed pattern. In this case, the intensity minimum of the 2nd diffraction order indicates the end of the development process.

REFERENCES:
patent: 3802940 (1974-04-01), Villers et al.
patent: 3957376 (1976-05-01), Charsky et al.
patent: 4039370 (1977-08-01), Kleinknecht
IBM Tech. Disc. Bull., vol. 18, No. 6, Nov. 1975, pp. 1867 to 1870.
IBM Tech. Disc. Bull., vol. 15, No. 11, Apr. 1973, pp. 3532 and 3533.

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