Method and system for improvement of dose correction for...

Details Method and system for improvement of dose correction for... Method and system for improvement of dose correction for...

2007-02-22

2010-11-02

Wells, Nikita (Department: 2881)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S296000, C430S942000, C250S492200, C250S492300

Reexamination Certificate

active

07824828

ABSTRACT:
A method and system for dose correction of a particle beam writer is disclosed. The method and system includes reading a file of writing objects that includes dose intensity, calculating a rate of dose intensity change between adjacent writing objects, selecting a writing object that may need accuracy improvement of dose correction based on the rate of dose intensity change, and improving accuracy of the dose correction of the writing object that is selected and its adjacent objects.

REFERENCES:
patent: 5051598 (1991-09-01), Ashton et al.
patent: 5241185 (1993-08-01), Meiri et al.
patent: 5424173 (1995-06-01), Wakabayashi et al.
patent: 5563419 (1996-10-01), Tamura
patent: 5847959 (1998-12-01), Veneklasen et al.
patent: 5863682 (1999-01-01), Abe et al.
patent: 6107207 (2000-08-01), Waas et al.
patent: 6243487 (2001-06-01), Nakajima
patent: 6370441 (2002-04-01), Ohnuma
patent: 6373071 (2002-04-01), Innes et al.
patent: 6379851 (2002-04-01), Innes
patent: 6646275 (2003-11-01), Oae et al.
patent: 6720565 (2004-04-01), Innes et al.
patent: 6815693 (2004-11-01), Kamijo et al.
patent: 7205078 (2007-04-01), Osawa et al.
patent: 2003/0054580 (2003-03-01), Yamamoto et al.
patent: 2004/0268289 (2004-12-01), Sandstrom et al.
Abe T. et al., “Proximity effect correction for an electron beam direct writing system EX-7” J. Vac. Sci. Technol. B 7(6), pp. 1524-1527, Nov./Dec. 1989.
Magoshi S. et al., “Proximity effect correction on the multi-level interconnect metal for high-energy electron-beam lithography”, Prc. SPIE vol. 5037, pp. 1035-1042, 2003.
Onigo K. et al., “3D Proximity Correction for Multi-Layer Structure in EB Lithography” Abstract of MNC2003, pp. 160-161-, 2003.
Takahashi, K. et al., “Proximity effect correction using pattern shape modification and area density map” J. Vac. Sci. Technol. B 18(6), pp. 3150-3157, Nov./Dec. 2000.
Lapanik et al.U.S. Appl. No. 11/607,753, filed Nov. 11, 2006.
Mitsuhashi,T. U.S. Appl. No. 11/678,530, filed Feb. 2, 2007.
Fujimura, A. et al. U.S. Appl. No. 11/603,603, filed Nov. 21, 2006.
Yoshida, K., U.S. Appl. No. 11/603,441, filed Nov. 21, 2006.
Yoshida et al. U.S. Appl. No. 11/607,305, filed Dec. 1, 2006.
Hara et al. U.S. Appl. No. 11/603,527, filed Nov. 11, 2006.
Hara et al. U.S. Appl. No. 11/603,526, filed Nov. 11, 2006.
Mitsuhashi,T. U.S. Appl. No. 11/226,253, filed Sep. 15, 2005.
International Search Report and Written Opinion dated Mar. 13, 2008 for PCTIUS2007/085137.
Office Action dated Jan. 5, 2009 for U.S. Appl. No. 11/603,527.
Final Office Action dated Jun. 29, 2009 for U.S. Appl. No. 11/603,527.
Non-Final Office Action dated Oct. 23, 2009 for U.S. Appl. No. 11/603,527.
Kawano et al. “Technology of EB Lithography System for 65-nm Node Mask Writing”, Hitachi Review, vol. 54 (2005), No. 1, pp. 37-41.
Sohda et al. “Recent progress in cell-projection electron-beam lithography”, Microelectronic Engineering 67-68 (2003), pp. 78-86.
Final Office Action dated Apr. 19, 2010 for U.S. Appl. No. 11/603,527.

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