Method and system for improved lithographic processing

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C430S005000, C430S311000, C438S014000

Reexamination Certificate

active

07824827

ABSTRACT:
A method is described for setting up the lithographic processing of a substrate. The lithographic processing typically is characterized by a set of selectable process parameters, such as the thickness, real refractive index, and absorption coefficient of a bottom anti-reflective layer. The method includes selecting a set of values for the selectable process parameters, determining the substrate reflectivity in the resist layer for these parameters, and evaluating if the determined substrate reflectivity is smaller than a maximum allowable substrate reflectivity in the resist layer. The maximum allowable substrate reflectivity is determined according to a floating criterion, i.e., the maximum allowable substrate reflectivity depends on a Normalized Image Log Slope related parameter.

REFERENCES:
patent: 6373553 (2002-04-01), Singh
patent: 2002/0097493 (2002-07-01), Li
patent: 2004/0165271 (2004-08-01), Krautschik
patent: 2005/0153540 (2005-07-01), Mimotogi
patent: 2006/0236294 (2006-10-01), Saidin et al.
patent: 2007/0015082 (2007-01-01), Angelopoulos et al.
patent: 2007/0059847 (2007-03-01), Op de Beeck
patent: 2007/0059849 (2007-03-01), Op de Beeck
patent: 1016930 (2000-07-01), None
Mack, Chris, “The Lithography Expert: Designing a Bottom Antireflective Coating”, Microlithography World, dated Feb. 2005.

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