Method and system for high density integrated bipolar power...

Details Method and system for high density integrated bipolar power... Method and system for high density integrated bipolar power...

2005-05-10

2005-05-10

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

C257S591000, C257S593000

Reexamination Certificate

active

06891249

ABSTRACT:
A method and system for providing a bipolar power transistor on a semiconductor device is disclosed. The method and system comprise providing a semiconductor substrate. The method and system includes providing an emitter base structure in the power device. The method and system further includes providing at least one oxidized slot through the emitter base structure and into the semiconductor substrate utilizing the highly inefficient portion of the emitter for this structure, thus wasted space is utilized to provide a power buss ground. This results in a smaller transistor for a given current. This is provided without any extra steps. This approach results in lower operating temperatures for a given current as compared to standard approaches.

REFERENCES:
patent: 3950233 (1976-04-01), Rosvold
patent: 5637911 (1997-06-01), Yamazaki

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