Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2008-10-27
2011-11-08
Chu, Chris (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257SE21584, C257S778000, C257S779000, C257S780000, C438S612000, C438S614000
Reexamination Certificate
active
08053907
ABSTRACT:
An integrated circuit system with one or more copper interconnects is provided. The one or more copper interconnects are in conductive contact with a substrate. The integrated circuit system includes a first dielectric layer, a copper material filling a first via through the first dielectric layer, a second dielectric layer in contact with the first dielectric layer, and a diffusion barrier layer. The diffusion barrier layer at least partially fills a second via through the second dielectric layer. At least a first part of the diffusion barrier layer is in direct contact with the copper material, and at least a second part of the diffusion barrier layer is in direct contact with the second dielectric layer. The integrated circuit system further includes a gold material at least partially filling the second via. The gold material is conductively connected with the copper material through the diffusion barrier layer and conductively connected with a substrate. Additionally, a method for making such an integrated circuit system with one or more copper interconnects is provided.
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Chen Guo Qing
Xiao De Yuan
Chu Chris
Kilpatrick Townsend and Stockton LLP
Semiconductor Manufacturing International (Shanghai) Corporation
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