Method and system for forming an air gap structure

Details Method and system for forming an air gap structure Method and system for forming an air gap structure

2007-10-18

2010-02-23

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S099000, C438S319000, C438S421000, C257SE21573, C257SE21581

Reexamination Certificate

active

07666754

ABSTRACT:
A method for forming an air gap structure on a substrate is described. The method comprises forming a sacrificial layer on a substrate, wherein the sacrificial layer comprises a decomposable material that thermally decomposes at a thermal decomposition temperature above approximately 350 degrees C. Thereafter, a cap layer is formed on the sacrificial layer at a substrate temperature less than the thermal decomposition temperature of the sacrificial layer. The sacrificial layer is decomposed by performing a first exposure of the substrate to ultraviolet (UV) radiation and heating the substrate to a first temperature less than the thermal decomposition temperature of the sacrificial layer, and the decomposed sacrificial layer is removed through the cap layer. The cap layer is cured to cross-link the cap layer by performing a second exposure of the substrate to UV radiation and heating the substrate to a second temperature greater than the first temperature.

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International Searching Authority, International Search Report and Written Opinion, International Application No. PCT/US08/79877, Mailed Dec. 22, 2008, 8 pages.

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