Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2011-06-07
2011-06-07
Vanoy, Timothy C (Department: 1736)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S003000, C117S011000, C117S013000, C423S348000, C423S349000, C023S30800S
Reexamination Certificate
active
07955433
ABSTRACT:
Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.
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“European Application Serial No. 08796655.2, European Extended Search Report mailed Jul. 6, 2010”, 7 Pgs.
Abrosimova Vera
Heuer Matthias
Kirscht Fritz
Linke Dieter
Ounadjela Kamel
Calisolar, Inc.
Liao Diana J
Schwegman Lundberg & Woessner, P.A.
Vanoy Timothy C
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