Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-03-01
2005-03-01
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C430S312000
Reexamination Certificate
active
06861365
ABSTRACT:
A method and system for forming a semiconductor device is provided. The method and system involves the utilization of a stamping tool to generate three-dimensional resist structures whereby thin film patterning steps can be transferred to the resist in a single molding step and subsequently revealed in later processing steps. Accordingly, the alignments between successive patterning steps can be determined by the accuracy with which the stamping tool has been fabricated, regardless of the dilations or contractions that can take place during the fabrication process.
REFERENCES:
patent: 5308415 (1994-05-01), Chou
patent: 6165911 (2000-12-01), Calveley
patent: 6255035 (2001-07-01), Minter et al.
patent: 6519761 (2003-02-01), Satoh
patent: 2002162747 (2000-11-01), None
Mei Ping
Taussig Carl Phillip
Chen Kin-Chan
Hewlett--Packard Development Company, L.P.
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