Method and system for fabrication of integrated...

Details Method and system for fabrication of integrated... Method and system for fabrication of integrated...

2005-04-05

2005-04-05

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S531000, C257S533000, C257S534000, C336S200000, C333S205000, C343S70000R

Reexamination Certificate

active

06876056

ABSTRACT:
An interconnect module and a method of manufacturing the same is described comprising: a substrate, an interconnect section formed on the substrate, and a variable passive device section formed on the substrate located laterally adjacent to the interconnect section. The interconnect section has at least two metal interconnect layers separated by a dielectric layer and the variable passive device has at least one moveable element. The moveable element is formed from a metal layer which is formed from the same material and at the same time as one of the two interconnect layers. The moveable element is formed on the dielectric layer and is released by local removal of the dielectric layer. Additional interconnect layers and intermediate dielectric layers may be added.

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