Method and system for fabricating free-standing nanostructures

Details Method and system for fabricating free-standing nanostructures Method and system for fabricating free-standing nanostructures

2006-03-07

2006-03-07

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S254000, C438S745000

Reexamination Certificate

active

07008853

ABSTRACT:
Systems and methods include introducing a semiconductor wafer into a process chamber. An etching chemistry is injected into the process chamber to etch a patterned layer and to release free-standing nanostructures on the semiconductor wafer. The etching chemistry includes a supercritical or liquid carbon dioxide fluid and an etching solution. The semiconductor wafer is rinsed by flooding a supercritical or liquid carbon dioxide fluid into the process chamber. The semiconductor wafer is dried by venting out supercritical or liquid carbon dioxide fluid from the process chamber.

REFERENCES:
patent: 2004/0003828 (2004-01-01), Jackson
Legtenberg, R. et al.., “Stiction of Surface Macromachined Structures after Rinsing and Drying: Model and Investigation of Adhesion Mechanisms”, Sensors and Actuators A, 43 (1994), pp. 230-238.
Goldfarb D. et al., “Aqueous-Based Photoresist Drying Using Supercritical Carbon Dioxide to Prevent Pattern Collapse”, J. Vac.Sci. Technol. B 18(6), Nov./Dec. 2000, pp. 3313-3317.

Affiliated with

Also associated with

Rating

Method and system for fabricating free-standing nanostructures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and system for fabricating free-standing nanostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for fabricating free-standing nanostructures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3587040