Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-06-14
2005-06-14
Weiss, Howard (Department: 2814)
Static information storage and retrieval
Floating gate
Particular biasing
C365S218000
Reexamination Certificate
active
06906959
ABSTRACT:
The present invention is a method and system for erasing a nitride memory device. In one embodiment of the present invention, an isolated P-well is formed in a semiconductor substrate. A plurality of N-type impurity concentrations are formed in the isolated P-well and a nitride memory cell is fabricated between two of the N-type impurity concentrations. Finally, an electrical contact is coupled to the isolated P-well.
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Chang Chi
He Yi
Liu Zhizheng
Randolph Mark W.
Runnion Edward F.
Advanced Micro Devices , Inc.
Pizarro-Crespo Marcos D.
Weiss Howard
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