Electricity: measuring and testing – Determining nonelectric properties by measuring electric...
Reexamination Certificate
2007-01-02
2007-01-02
Hirshfeld, Andrew H. (Department: 2858)
Electricity: measuring and testing
Determining nonelectric properties by measuring electric...
C324S071400, C073S105000, C073S580000
Reexamination Certificate
active
10996274
ABSTRACT:
A sensor for detecting mechanical perturbations represented by a change in an electrical signal includes a structure such as a cantilever, membrane, etc. and a field effect transistor such as a MOSFET embedded in the structure. The drain current of the embedded transistor changes with mechanical perturbations in the structure caused, for example, by a bio-chemical interaction being sensed. A scanning probe microscope utilizes the embedded MOSFET with a BiMOS actuator.
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Dravid Vinayak P.
Shekhawat Gajendra
Hirshfeld Andrew H.
McAndrews Held & Malloy Ltd.
Northwestern University
Zhu John
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