Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1992-05-13
1994-08-09
Dzierzynski, Paul M.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 340
Patent
active
053368924
ABSTRACT:
Improvement of resolution in terms of reducing minimum feature sizes and ximity effects on bulk substrates in high voltage electron beam lithography as applied to manufacture of electronic circuits from coated semiconductors involves the use of a dielectric layer interposed between an electrically semiconducting substrate and a resist layer. The dielectric layer functions to reduce the resist exposure resulting from the backscattered electrons coming from the substrate into the resist layer.
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patent: 3580749 (1971-05-01), Simon et al.
patent: 3688389 (1972-09-01), Nakamura et al.
patent: 3900737 (1975-08-01), Collier et al.
patent: 4463265 (1984-07-01), Owen et al.
patent: 5147823 (1992-09-01), Ishibashi et al.
Dobisz Elizabeth A.
Marrian Christie R. K.
Peckerar Martin C.
Rhee Kee W.
Dzierzynski Paul M.
Kap George A.
McDonnell Thomas E.
Nguyen Kiet T.
The United States of America as represented by the Secretary of
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