Method and system for dry etching a metal nitride

Details Method and system for dry etching a metal nitride Method and system for dry etching a metal nitride

2007-03-23

2010-10-19

Vinh, Lan (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

C216S037000, C216S067000, C438S238000, C438S689000, C438S692000

Reexamination Certificate

active

07815814

ABSTRACT:
A method and system of etching a metal nitride, such as titanium nitride, is described. The etching process comprises introducing a process composition having a halogen containing gas, such as Cl2, HBr, or BCl3, and a fluorocarbon gas having the chemical formula CxHyFz, where x and z are equal to unity or greater and y is equal to 0 or greater.

REFERENCES:
patent: 6531404 (2003-03-01), Nallan et al.
patent: 7282773 (2007-10-01), Li et al.
patent: 7312120 (2007-12-01), Shea
patent: 2005/0045276 (2005-03-01), Patel et al.
patent: 2005/0196915 (2005-09-01), Jeong et al.
patent: 0924753 (1997-12-01), None
Luong, Vinh, U.S. Appl. No. 12/729,538, filed Mar. 23, 2010, Specification with claims Drawings.

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