Method and system for determining transistor degradation...

Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Parameter related to the reproduction or fidelity of a...

Reexamination Certificate

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C257S048000, C331S044000, C331S057000, C438S017000, C438S018000, C703S013000, C703S014000, C703S015000, C703S019000

Reexamination Certificate

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06933731

ABSTRACT:
According to one embodiment, a method for isolating degradation mechanisms in transistors includes providing a ring oscillator having a plurality of delay elements. Each delay element operates as a delay element through the use of one or more transistors of only a first type and no transistors of the opposite type. The method further includes operating the ring oscillator and measuring the frequency resulting from the ring oscillator over time. The magnitude of an isolated degradation mechanism is determined based on a comparison of the measured frequency and an expected frequency for the ring oscillator absent degradation.

REFERENCES:
patent: 5587665 (1996-12-01), Jiang
patent: 6024478 (2000-02-01), Yamamoto
patent: 6051984 (2000-04-01), Huang et al.
patent: 6216099 (2001-04-01), Fang et al.
patent: 6278964 (2001-08-01), Fang et al.
patent: 6321364 (2001-11-01), Hirata
patent: 6842078 (2005-01-01), Manna et al.

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